X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1-x/GaAs(001) sandwiched structures
文献类型：期刊论文
| 作者 | Pan Z ; Wang YT ; Li LH ; Zhang W ; Lin YW ; Zhou ZQ ; Wu RH |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 217期号:1-2页码:26-32 |
| 关键词 | x-ray diffraction strain relaxation GaNxAs1-x/GaAs photoluminescence RHEED MOLECULAR-BEAM EPITAXY TEMPERATURE PULSED OPERATION BAND-GAP ENERGY NITROGEN GAASN GANXAS1-X GAAS1-XNX ALLOYS LASERS LAYERS |
| ISSN号 | 0022-0248 |
| 通讯作者 | pan z,chinese acad sci,state key lab integrated optoelect,natl res ctr optoelect technol,inst semicond,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | an x-ray diffraction method, estimating the strain relaxation in an ultrathin layer, has been discussed by using kinematic and dynamical x-ray diffraction (xrd) theory. the characteristic parameter delta omega, used as the criterion of the strain relaxation in ultrathin layers, is deduced theoretically. it reveals that delta omega should be independent of the layer thickness in a coherently strained layer. by this method, we characterized our ultrathin ganxas1-x samples with n contents up to 5%. xrd measurements show that our ganxas1-x layers are coherently strained on gaas even for such a large amount of n. furthermore, a series of ganxas1-x samples with same n contents but different layer thicknesses were also characterized. it was found that the critical thickness (l-c) of ganas in the gaas/ganas/gaas structures determined by xrd measurement was 10 times smaller than the theoretical predictions based on the matthews and blakeslee model. this result was also confirmed by in situ observation of reflection high-energy electron diffraction (rheed) and photoluminescence (pl) measurements. rheed observation showed that the growth mode of ganas layer changed from 2d- to 3d-mode as the layer thickness exceeded l-c. pl measurements showed that the optical properties of ganas layers deteriorated rapidly as the layer thickness exceeded l-c. (c) 2000 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12504]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Pan Z,Wang YT,Li LH,et al. X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1-x/GaAs(001) sandwiched structures[J]. journal of crystal growth,2000,217(1-2):26-32. |
| APA | Pan Z.,Wang YT.,Li LH.,Zhang W.,Lin YW.,...&Wu RH.(2000).X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1-x/GaAs(001) sandwiched structures.journal of crystal growth,217(1-2),26-32. |
| MLA | Pan Z,et al."X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1-x/GaAs(001) sandwiched structures".journal of crystal growth 217.1-2(2000):26-32. |
入库方式： OAI收割
来源：半导体研究所
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