DX-like centers in n-type Al-doped ZnS1-xTex grown by molecular-beam epitaxy
文献类型：期刊论文
| 作者 | Lu LW ; Mak KK ; Ma ZH ; Wang J ; Sou IK ; Ge WK |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 216期号:1-4页码:141-146 |
| 关键词 | DX-like centers ZnS1-xTex hmolecular-beam epitaxy ZNSTE |
| ISSN号 | 0022-0248 |
| 通讯作者 | lu lw,chinese acad sci,inst semiconductors,lab semiconductor mat sci,beijing 100083,peoples r china. |
| 中文摘要 | al-related dx-like centers were observed in n-type al-doped zns1-xtex epilayers grown by molecular-beam epitaxy on gaas substrates. the capacitance-voltage measurement, deep-level transient spectroscopy, and photoconductivity spectroscopy revealed that the behaviors of al donors in zns1-xtex were similar to the so-called dx centers in alxga1-xas. the optical ionization energies (e-i) and emission barriers (e-e) for the observed two al-related dx-like centers were determined as e-i similar to 1.0 and 2.0cv and e-e similar to 0.21 and 0.39 ev, respectively. it was also shown that the formation of al-related dx-like centers resulted in a significantly large lattice relaxation in zns1-xtex. (c) 2000 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12506]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Lu LW,Mak KK,Ma ZH,et al. DX-like centers in n-type Al-doped ZnS1-xTex grown by molecular-beam epitaxy[J]. journal of crystal growth,2000,216(1-4):141-146. |
| APA | Lu LW,Mak KK,Ma ZH,Wang J,Sou IK,&Ge WK.(2000).DX-like centers in n-type Al-doped ZnS1-xTex grown by molecular-beam epitaxy.journal of crystal growth,216(1-4),141-146. |
| MLA | Lu LW,et al."DX-like centers in n-type Al-doped ZnS1-xTex grown by molecular-beam epitaxy".journal of crystal growth 216.1-4(2000):141-146. |
入库方式： OAI收割
来源：半导体研究所
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