Photoluminescence of InAs quantum dots in n-i-p-i GaAs superlattice
文献类型：期刊论文
| 作者 | Wang JZ ; Wang ZM ; Wang ZG ; Chen YH ; Yang Z |
| 刊名 | physical review b
 |
| 出版日期 | 2000 |
| 卷号 | 61期号:23页码:15614-15616 |
| ISSN号 | 0163-1829 |
| 通讯作者 | wang jz,chinese acad sci,inst semicond,lab semicond mat sci,beijing 100083,peoples r china. |
| 中文摘要 | large blueshift and linewidth increase in photoluminescence (pl) spectra of inas quantum dots (qd's) in n-i-p-i gaas superlattice were observed. by increasing the excitation intensity from 0.5 to 32 w/cm(2), the pl peak position blueshifted 18 mev, and the linewidth increased by 20 mev. such large changes are due to the state-filling effects of the qd's resulted from the separation of photogenerated electrons and holes caused by the doping potential. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12528]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang JZ,Wang ZM,Wang ZG,et al. Photoluminescence of InAs quantum dots in n-i-p-i GaAs superlattice[J]. physical review b,2000,61(23):15614-15616. |
| APA | Wang JZ,Wang ZM,Wang ZG,Chen YH,&Yang Z.(2000).Photoluminescence of InAs quantum dots in n-i-p-i GaAs superlattice.physical review b,61(23),15614-15616. |
| MLA | Wang JZ,et al."Photoluminescence of InAs quantum dots in n-i-p-i GaAs superlattice".physical review b 61.23(2000):15614-15616. |
入库方式： OAI收割
来源：半导体研究所
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