Study of self-assembled InAs quantum dots grown on low temperature GaAs epi-layer
文献类型：期刊论文
| 作者 | Wang XD ; Wang H ; Wang HL ; Niu ZC ; Feng SL |
| 刊名 | journal of infrared and millimeter waves
 |
| 出版日期 | 2000 |
| 卷号 | 19期号:3页码:177-180 |
| 关键词 | InAs quantum dots low temperature GaAs As precipitates MOLECULAR-BEAM EPITAXY DEPENDENCE |
| ISSN号 | 1001-9014 |
| 通讯作者 | wang xd,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china. |
| 中文摘要 | inas self-organized quantum dots (qds) grown on annealed low temperature gaas (lt-gaas) epi-layer were investigated by transmission electron microscopy (tem) and photoluminescence (pl) measurement. tem showed that qds formed on annealed lt-gaas epi-layer have a smaller size and a higher density than qds formed on normal gaas buffer layer. in addition, the pl spectra analysis showed that the lt-gaas epi-layer resulted in a blue shift in peak energy, and a narrower linewidth in the pl peak. the differences were attributed to the point defects and as precipitates in annealed lt-gaas epi-layer for the point defects and as precipitates change the strain field of the surface. the results provide a method to improve the uniformity and change the energy band structure of the qds by controlling the defects in the lt-gaas epi-layer. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12536]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang XD,Wang H,Wang HL,et al. Study of self-assembled InAs quantum dots grown on low temperature GaAs epi-layer[J]. journal of infrared and millimeter waves,2000,19(3):177-180. |
| APA | Wang XD,Wang H,Wang HL,Niu ZC,&Feng SL.(2000).Study of self-assembled InAs quantum dots grown on low temperature GaAs epi-layer.journal of infrared and millimeter waves,19(3),177-180. |
| MLA | Wang XD,et al."Study of self-assembled InAs quantum dots grown on low temperature GaAs epi-layer".journal of infrared and millimeter waves 19.3(2000):177-180. |
入库方式： OAI收割
来源：半导体研究所
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