The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy
文献类型：期刊论文
| 作者 | Wang HL ; Zhu HJ ; Ning D ; Wang H ; Wang XD ; Guo ZS ; Feng SL |
| 刊名 | journal of infrared and millimeter waves
 |
| 出版日期 | 2000 |
| 卷号 | 19期号:3页码:191-193 |
| 关键词 | atomic hydrogen-assisted molecular beam epitaxy deep level transient spectroscopy deep level defects DISLOCATION DENSITY IRRADIATION |
| ISSN号 | 1001-9014 |
| 通讯作者 | ning d,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china. |
| 中文摘要 | the electrical activity of defects in gaas grown on gaas substrates doped with si and be by both conventional molecular beam epitaxy (mbe) and atomic hydrogen-assisted mbe (h-mbe) were characterized by deep level transient spectroscopy. the trap densities are significantly reduced in the homoepitaxial gaas grown by h-mbe compared to that grown by mbe. the reduction of trap densities is attributed to in situ passivation of these defects by atomic h during the growth. the improvement characteristics of gaas materials will be significance for fabrication of semiconductor devices. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12538]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang HL,Zhu HJ,Ning D,et al. The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy[J]. journal of infrared and millimeter waves,2000,19(3):191-193. |
| APA | Wang HL.,Zhu HJ.,Ning D.,Wang H.,Wang XD.,...&Feng SL.(2000).The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy.journal of infrared and millimeter waves,19(3),191-193. |
| MLA | Wang HL,et al."The improvement characteristics of homoepitaxial GaAs grown by atomic hydrogen-assisted molecular beam epitaxy".journal of infrared and millimeter waves 19.3(2000):191-193. |
入库方式： OAI收割
来源：半导体研究所
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