Tuning of conduction intersublevel absorption wavelengths in (In, Ga)As/GaAs quantum-dot nanostructures
文献类型：期刊论文
| 作者 | Pan D ; Towe E ; Kennerly S ; Kong MY |
| 刊名 | applied physics letters
 |
| 出版日期 | 2000 |
| 卷号 | 76期号:24页码:3537-3539 |
| 关键词 | INFRARED PHOTODETECTORS ENERGY-LEVELS ISLANDS GROWTH INGAAS GAAS |
| ISSN号 | 0003-6951 |
| 通讯作者 | pan d,univ virginia,lab opt & quantum elect,charlottesville,va 22903 usa. |
| 中文摘要 | we demonstrate that by increasing the amount of (in, ga)as deposit in a quantum dot layer, the intersublevel absorption wavelength for (in, ga)as/gaas quantum-dot infrared photodetectors can be blue-shifted from 15 to 10 mu m while the photoluminescence peak is red-shifted. we directly compare the measured energy spacing between intersublevels obtained from infrared absorption spectroscopy with those obtained from photoluminescence spectroscopy. we find that the intersublevel energy spacing determined from absorption measurements is much larger than that obtained from the photoluminescence measurements. (c) 2000 american institute of physics. [s0003-6951(00)04524-1]. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12544]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Pan D,Towe E,Kennerly S,et al. Tuning of conduction intersublevel absorption wavelengths in (In, Ga)As/GaAs quantum-dot nanostructures[J]. applied physics letters,2000,76(24):3537-3539. |
| APA | Pan D,Towe E,Kennerly S,&Kong MY.(2000).Tuning of conduction intersublevel absorption wavelengths in (In, Ga)As/GaAs quantum-dot nanostructures.applied physics letters,76(24),3537-3539. |
| MLA | Pan D,et al."Tuning of conduction intersublevel absorption wavelengths in (In, Ga)As/GaAs quantum-dot nanostructures".applied physics letters 76.24(2000):3537-3539. |
入库方式： OAI收割
来源：半导体研究所
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