Self-organized type-II In0.55Al0.45As/Al0.50Ga0.50As quantum dots realized on GaAs(311)A
文献类型：期刊论文
| 作者 | Xu B
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2000 |
| 卷号 | 76期号:25页码:3741-3743 |
| 关键词 | VISIBLE PHOTOLUMINESCENCE LINEWIDTH INJECTION EMISSION WIRES LASER |
| ISSN号 | 0003-6951 |
| 通讯作者 | liu hy,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | self-organized in0.55al0.45as/al0.50ga0.50as quantum dots are grown by the stranski-krastanow growth mode using molecular beam epitaxy on the gaas(311)a substrate. the optical properties of type-ii inalas/algaas quantum dots have been demonstrated by the excitation power and temperature dependence of photoluminescence spectra. a simple model accounting for the size-dependent band gap of quantum dots is given to qualitatively understand the formation of type-ii in0.55al0.45as/al0.50ga0.50as quantum dots driven by the quantum-confinement-induced gamma --> x transition. the results provide new insights into the band structure of inalas/algaas quantum dots. (c) 2000 american institute of physics. [s0003-6951(00)00725-7]. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12546]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. Self-organized type-II In0.55Al0.45As/Al0.50Ga0.50As quantum dots realized on GaAs(311)A[J]. applied physics letters,2000,76(25):3741-3743. |
| APA | Xu B.(2000).Self-organized type-II In0.55Al0.45As/Al0.50Ga0.50As quantum dots realized on GaAs(311)A.applied physics letters,76(25),3741-3743. |
| MLA | Xu B."Self-organized type-II In0.55Al0.45As/Al0.50Ga0.50As quantum dots realized on GaAs(311)A".applied physics letters 76.25(2000):3741-3743. |
入库方式： OAI收割
来源：半导体研究所
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