Epitaxial growth of GaNAs/GaAs heterostructure materials
文献类型：期刊论文
| 作者 | Lin YW ; Pan Z ; Li LH ; Zhou ZQ ; Wang H ; Zhang W |
| 刊名 | thin solid films
 |
| 出版日期 | 2000 |
| 卷号 | 368期号:2页码:249-252 |
| 关键词 | GaNAs DC active N-2 plasma molecular beam epitaxy nitrogen content Fourier transform infrared spectroscopy of intensity BAND-GAP ENERGY GAAS1-XNX NITROGEN |
| ISSN号 | 0040-6090 |
| 通讯作者 | lin yw,chinese acad sci,inst semicond,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | a series of systematic experiments on the growth of high quality ganas strained layers on gaas (001) substrate have been carried out by using dc active nz plasma, assisted molecular beam epitaxy. the samples of ganas between 3 and 200 nm thick were evaluated by double crystal x-ray diffraction (xrd) and photoluminescence (pl) measurements. pl and xrd measurements for these samples are in good agreement. some material growth and structure parameters affecting the properties of ganas/gaas heterostructure were studied; they were: (1) growth temperature of ganas epilayer; (2) electrical current of active n-2 plasma; (3) nz flow rate; (4) ganas growth rate; (5) the thickness of ganas strained layer. xrd and pl measurements showed that superlattice with distinct satellite peaks up to two orders and quantum well structure with intensity at 22 mev fourier transform infrared spectroscopy (fwhm) can be achieved in molecular beam epitaxy (mbe) system. (c) 2000 published by elsevier science s.a. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12550]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Lin YW,Pan Z,Li LH,et al. Epitaxial growth of GaNAs/GaAs heterostructure materials[J]. thin solid films,2000,368(2):249-252. |
| APA | Lin YW,Pan Z,Li LH,Zhou ZQ,Wang H,&Zhang W.(2000).Epitaxial growth of GaNAs/GaAs heterostructure materials.thin solid films,368(2),249-252. |
| MLA | Lin YW,et al."Epitaxial growth of GaNAs/GaAs heterostructure materials".thin solid films 368.2(2000):249-252. |
入库方式： OAI收割
来源：半导体研究所
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