Electronic characteristics of InAs self-assembled quantum dots
文献类型：期刊论文
| 作者 | Wang HL ; Feng SL ; Zhu HJ ; Ning D ; Chen F |
| 刊名 | physica e-low-dimensional systems & nanostructures
 |
| 出版日期 | 2000 |
| 卷号 | 7期号:3-4页码:383-387 |
| 关键词 | InAs/GaAs quantum dots self-assembled structure DLTS PL band offset ENERGY-LEVELS CARRIER RELAXATION SPECTROSCOPY |
| ISSN号 | 1386-9477 |
| 通讯作者 | wang hl,qufu normal univ,dept phys,qufu 273165,peoples r china. |
| 中文摘要 | deep-level transient spectroscopy and photoluminescence studies have been carried out on structures containing self-assembled inas quantum dots formed in gaas matrices. the use of n- and p-type gaas matrices allows us to study separately electron and hole levels in the quantum dots by the deep-level transient spectroscopy technique. from analysis of deep-level transient spectroscopy measurements it follows that the quantum dots have electron levels 130 mev below the bottom of the gaas conduction band and heavy-hole levels at 90 mev above the top of the gaas valence band. combining with the photoluminescence results, the band structures of inas and gaas have been determined. (c) 2000 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12558]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang HL,Feng SL,Zhu HJ,et al. Electronic characteristics of InAs self-assembled quantum dots[J]. physica e-low-dimensional systems & nanostructures,2000,7(3-4):383-387. |
| APA | Wang HL,Feng SL,Zhu HJ,Ning D,&Chen F.(2000).Electronic characteristics of InAs self-assembled quantum dots.physica e-low-dimensional systems & nanostructures,7(3-4),383-387. |
| MLA | Wang HL,et al."Electronic characteristics of InAs self-assembled quantum dots".physica e-low-dimensional systems & nanostructures 7.3-4(2000):383-387. |
入库方式： OAI收割
来源：半导体研究所
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