High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers
文献类型：期刊论文
| 作者 | Chen LH ; Xu ZT ; Ma XY ; Zhang JM ; Yang GW ; Xu JY |
| 刊名 | optical materials
 |
| 出版日期 | 2000 |
| 卷号 | 14期号:3页码:201-204 |
| 关键词 | high power Al-free laser communication EPITAXY |
| ISSN号 | 0925-3467 |
| 通讯作者 | chen lh,chinese acad sci,inst semicond,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | in this paper, we reported on the fabrication of 980 nm ingaas/ingaasp strained quantum-well (qw) lasers with broad waveguide. the laser structure was grown by low-pressure metalorganic chemical vapor deposition on a n(+)- gaas substrate. for 3 mu m stripe ridge waveguide lasers, the threshold current is 30 ma and the maximum output power and the output power operating in fundamental mode are 350 mw and 200 mw, respectively. the output power from the single mode fiber is up to 100 mw, the coupling efficiency is 50%. we also fabricated 100 mu m broad stripe coated lasers with cavity length of 800 mu m, a threshold current density of 170 a/cm(2), a high slope efficiency of 1.03 w/a and a far-field pattern of 40 x 6 degrees are obtained. the maximum output power of 3.5 w is also obtained for 100 mu m wide coated lasers. (c) 2000 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12560]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen LH,Xu ZT,Ma XY,et al. High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers[J]. optical materials,2000,14(3):201-204. |
| APA | Chen LH,Xu ZT,Ma XY,Zhang JM,Yang GW,&Xu JY.(2000).High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers.optical materials,14(3),201-204. |
| MLA | Chen LH,et al."High power 980 nm Al-free strained quantum-well lasers for erbium-doped fiber amplifiers".optical materials 14.3(2000):201-204. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。