The fabrication of thick SiO2 layer by anodization
文献类型：期刊论文
| 作者 | Ou HY ; Yang QQ ; Lei HB ; Wang QM ; Hu XW |
| 刊名 | optical materials
 |
| 出版日期 | 2000 |
| 卷号 | 14期号:3页码:271-275 |
| 关键词 | thick SiO2 layer porous silicon SiO2/Si waveguide device WAVE-GUIDES SILICON |
| ISSN号 | 0925-3467 |
| 通讯作者 | ou hy,chinese acad sci,inst semicond,state key lab integrated optoelect,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | silicon-based silica waveguide (sio2/si) devices have huge applications in optical telecommunication. sio2 up to 25-mu m thick is necessary for some passive sio2/si waveguide devices. oxidizing porous silicon to obtain thick sio2 as cladding layer is presented. the experimental results of porous layer and oxidized porous layer formation were given. the relationship between cracking of sio2 and temperature varying rate was given experimentally. such conclusions are drawn: oxidation rate of porous silicon is several orders faster than that of bulk silicon; appropriate temperature variation rate during oxidation can prevent sio2 on silicon substrates from cracking, and 25 mu m thick silicon dioxide layer has been obtained. (c) 2000 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12568]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ou HY,Yang QQ,Lei HB,et al. The fabrication of thick SiO2 layer by anodization[J]. optical materials,2000,14(3):271-275. |
| APA | Ou HY,Yang QQ,Lei HB,Wang QM,&Hu XW.(2000).The fabrication of thick SiO2 layer by anodization.optical materials,14(3),271-275. |
| MLA | Ou HY,et al."The fabrication of thick SiO2 layer by anodization".optical materials 14.3(2000):271-275. |
入库方式： OAI收割
来源：半导体研究所
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