Semi-insulating GaAs grown in outer space
文献类型：期刊论文
| 作者 | Chen NF ; Zhong XR ; Lin LY ; Xie X ; Zhang M |
| 刊名 | materials science and engineering b-solid state materials for advanced technology
 |
| 出版日期 | 2000 |
| 卷号 | 75期号:2-3页码:134-138 |
| 关键词 | GaAs outer space microgravity integrated circuit SEMIINSULATING GALLIUM-ARSENIDE LEC-GAAS DEFECTS STOICHIOMETRY SEGREGATION CARBON BORON |
| ISSN号 | 0921-5107 |
| 通讯作者 | chen nf,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | a semi-insulating gaas single crystal ingot was grown in a recoverable satellite, within a specially designed pyrolytic boron nitride crucible, in a power-traveling furnace under microgravity. the characteristics of a compound semiconductor single crystal depends fundamentally on its stoichiometry, i.e. the ration of two types of atoms in the crystal. a practical technique for nondestructive and quantitative measuring stoichiometry in gaas single crystal was used to analyze the space-grown gaas single crystal. the distribution of stoichiometry in a gaas wafer was measured for the first time. the electrical, optical and structural properties of the space-grown gaas crystal were studied systematically, device fabricating experiments prove that the quality of field effect transistors fabricated from direct ion-implantation in semi-insulating gaas wafers has a close correlation with the crystal's stoichiometry. (c) 2000 elsevier science s.a. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12570]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen NF,Zhong XR,Lin LY,et al. Semi-insulating GaAs grown in outer space[J]. materials science and engineering b-solid state materials for advanced technology,2000,75(2-3):134-138. |
| APA | Chen NF,Zhong XR,Lin LY,Xie X,&Zhang M.(2000).Semi-insulating GaAs grown in outer space.materials science and engineering b-solid state materials for advanced technology,75(2-3),134-138. |
| MLA | Chen NF,et al."Semi-insulating GaAs grown in outer space".materials science and engineering b-solid state materials for advanced technology 75.2-3(2000):134-138. |
入库方式： OAI收割
来源：半导体研究所
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