A study on strong room temperature photoluminescence of a-SiNx : H films
文献类型：期刊论文
| 作者 | Wang Y ; Yue RF ; Li GH ; Liao XB ; Wang YQ ; Diao HW ; Kong GL |
| 刊名 | materials letters
 |
| 出版日期 | 2000 |
| 卷号 | 44期号:2页码:87-90 |
| 关键词 | a-SiNx : H alloys photuluminescence percolation theory quantum well model PECVD HYDROGENATED AMORPHOUS-SILICON VISIBLE PHOTOLUMINESCENCE POROUS SILICON |
| ISSN号 | 0167-577x |
| 通讯作者 | yue rf,tsing hua univ,inst microelect,novel devices res div,beijing 100084,peoples r china. |
| 中文摘要 | photoluminescence measurements have been performed in si-rich a-sinx:h (x less than or equal to 1.3) alloys prepared by glow discharge. it is observed that the blue shift of the peak of room temperature luminescence spectrum with increasing n content parallels increasing intensity. two distinct luminescence mechanisms are proposed in a-sinx:h with the threshold near x = 0.8. for low x, the samples show typical luminescence properties of a-si:h, while for high x, the normalized luminescence bands are independent of temperature. combining percolation theory, the luminescence origins are discussed on the basis of brodsky's quantum well model. (c) 2000 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12576]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang Y,Yue RF,Li GH,et al. A study on strong room temperature photoluminescence of a-SiNx : H films[J]. materials letters,2000,44(2):87-90. |
| APA | Wang Y.,Yue RF.,Li GH.,Liao XB.,Wang YQ.,...&Kong GL.(2000).A study on strong room temperature photoluminescence of a-SiNx : H films.materials letters,44(2),87-90. |
| MLA | Wang Y,et al."A study on strong room temperature photoluminescence of a-SiNx : H films".materials letters 44.2(2000):87-90. |
入库方式： OAI收割
来源：半导体研究所
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