Tentative analysis of Swirl defects in silicon crystals
文献类型：期刊论文
| 作者 | Fan TW ; Qian JJ ; Wu J ; Lin LY ; Yuan J |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 213期号:3-4页码:276-282 |
| 关键词 | swirl defect silicon electron energy loss spectroscopy |
| ISSN号 | 0022-0248 |
| 通讯作者 | fan tw,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | swirl defects in dislocation-free czochralski (cz) silicon crystals have been investigated by preferential etching, transmission electron microscopy (ter i) and electron energy loss spectroscopy (eels) mode of a scanning transmission electron microscope (stem). two kinds of swirl defects have been found with a good correspondence between striated pattern consisting of hillocks and the buried micro-defects. the swirl defects were identified as perfect dislocation loop cluster and tetrahedral precipitate, respectively. in addition, a kind of tiny micro-defects is found to be distributed preferentially in the vicinity of the swirl pattern although there is no detectable correspondence between hillocks and the micro-defects. the energy-filtered images have been obtained by the plasma peaks at different parts of a coherent precipitate with the si matrix. the experimental results show some indications of the existence of oxygen and carbon in the core of the precipitate and suggest that oxygen and carbon may play important roles in the formation of swirl defect. (c) 2000 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12578]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Fan TW,Qian JJ,Wu J,et al. Tentative analysis of Swirl defects in silicon crystals[J]. journal of crystal growth,2000,213(3-4):276-282. |
| APA | Fan TW,Qian JJ,Wu J,Lin LY,&Yuan J.(2000).Tentative analysis of Swirl defects in silicon crystals.journal of crystal growth,213(3-4),276-282. |
| MLA | Fan TW,et al."Tentative analysis of Swirl defects in silicon crystals".journal of crystal growth 213.3-4(2000):276-282. |
入库方式： OAI收割
来源：半导体研究所
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