Effect of low-temperature SiGe interlayer on the growth of relaxed SiGe
文献类型：期刊论文
| 作者 | Li DZ ; Huang CJ ; Cheng BW ; Wang HJ ; Yu Z ; Zhang CH ; Yu JZ ; Wang QM |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 213期号:3-4页码:308-311 |
| 关键词 | SiGe UHV/CVD RHEED Raman scattering SILICON RELAXATION |
| ISSN号 | 0022-0248 |
| 通讯作者 | li dz,chinese acad sci,inst semicond,state key lab integrated optoelect,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | a low-temperature si0.8ge0.2 (lt-si0.8ge0.2) interlayer was grown at 500 degrees c to improve the relaxed si0.8ge0.2 surface and reduce the dislocation density in it, which was confirmed by the change of reflective high-energy electron diffraction (rheed) pattern from spotty to streaky and etch pits counts. for the same extent of strain; the threading dislocation density was reduced from 8 x 10(7) cm(-2) in the latter to 2 x 10(6) cm(-2) in the former. (c) 2000 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12580]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li DZ,Huang CJ,Cheng BW,et al. Effect of low-temperature SiGe interlayer on the growth of relaxed SiGe[J]. journal of crystal growth,2000,213(3-4):308-311. |
| APA | Li DZ.,Huang CJ.,Cheng BW.,Wang HJ.,Yu Z.,...&Wang QM.(2000).Effect of low-temperature SiGe interlayer on the growth of relaxed SiGe.journal of crystal growth,213(3-4),308-311. |
| MLA | Li DZ,et al."Effect of low-temperature SiGe interlayer on the growth of relaxed SiGe".journal of crystal growth 213.3-4(2000):308-311. |
入库方式： OAI收割
来源：半导体研究所
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