Photoelectrochemical behavior of a novel composite In0.15Ga0.85As/GaAs vertical bar GaAs/Al0.3Ga0.7As multiple quantum well electrode
文献类型：期刊论文
| 作者 | Liu Y ; Xiao XR ; Zeng YP |
| 刊名 | electrochemistry communications
 |
| 出版日期 | 2000 |
| 卷号 | 2期号:6页码:404-406 |
| 关键词 | multiple quantum well electrode quantization effect exciton transition photocurrent spectrum photoelectrochemical cell SOLAR-CELLS PHOTOCURRENT SPECTROSCOPY SUPERLATTICE ELECTRODES EFFICIENCY PHOTOLUMINESCENCE HETEROSTRUCTURE |
| ISSN号 | 1388-2481 |
| 通讯作者 | xiao xr,chinese acad sci,inst chem,ctr mol sci,beijing 100101,peoples r china. |
| 中文摘要 | a novel composite inxga1-xas/gaas/gaas/alxga1-xas multiple quantum well material with different well widths was studied as a new kind of photoelectrode in a photoelectrochemical cell. the photocurrent spectrum and photocurrent-electrode potential curve were measured in ferrocene nonaqueous solution. pronounced quantization effects and strong exciton absorption were observed in the photocurrent spectrum. the effects of surface states and interfacial states on the photocurrent-electrode potential curve are discussed. (c) 2000 elsevier science s.a. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12582]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu Y,Xiao XR,Zeng YP. Photoelectrochemical behavior of a novel composite In0.15Ga0.85As/GaAs vertical bar GaAs/Al0.3Ga0.7As multiple quantum well electrode[J]. electrochemistry communications,2000,2(6):404-406. |
| APA | Liu Y,Xiao XR,&Zeng YP.(2000).Photoelectrochemical behavior of a novel composite In0.15Ga0.85As/GaAs vertical bar GaAs/Al0.3Ga0.7As multiple quantum well electrode.electrochemistry communications,2(6),404-406. |
| MLA | Liu Y,et al."Photoelectrochemical behavior of a novel composite In0.15Ga0.85As/GaAs vertical bar GaAs/Al0.3Ga0.7As multiple quantum well electrode".electrochemistry communications 2.6(2000):404-406. |
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来源：半导体研究所
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