Binding energy of ionized-donor-bound excitons in the GaAs-AlxGa1-xAs quantum wells
文献类型：期刊论文
| 作者 | Liu JJ ; Zhang SF ; Kong XJ ; Li SS |
| 刊名 | chinese physics letters
 |
| 出版日期 | 2000 |
| 卷号 | 17期号:5页码:358-359 |
| 关键词 | 2-DIMENSIONAL SEMICONDUCTORS NEUTRAL DONORS BIEXCITONS PHOTOLUMINESCENCE |
| ISSN号 | 0256-307x |
| 通讯作者 | liu jj,hebei normal univ,dept phys,shijiazhuang 050016,peoples r china. |
| 中文摘要 | the binding energy of an exciton bound to an ionized donor impurity (d+,x) located st the center or the edge in gaas-alxga1-xas quantum wells is calculated variationally for the well width from 10 to 300 angstrom by using a two-parameter wave function, the theoretical results are discussed and compared with the previous experimental results. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12584]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu JJ,Zhang SF,Kong XJ,et al. Binding energy of ionized-donor-bound excitons in the GaAs-AlxGa1-xAs quantum wells[J]. chinese physics letters,2000,17(5):358-359. |
| APA | Liu JJ,Zhang SF,Kong XJ,&Li SS.(2000).Binding energy of ionized-donor-bound excitons in the GaAs-AlxGa1-xAs quantum wells.chinese physics letters,17(5),358-359. |
| MLA | Liu JJ,et al."Binding energy of ionized-donor-bound excitons in the GaAs-AlxGa1-xAs quantum wells".chinese physics letters 17.5(2000):358-359. |
入库方式： OAI收割
来源：半导体研究所
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