Photonic switch and NOT logic gate based on the hybrid integration of a GaAsVCSEL and a GaAs MISS
文献类型:期刊论文
作者 | Kang XJ ; Lin SM ; Liao QW ; Cheng P ; Gao JH ; Liu SA ; Wang HJ ; Zhang CH ; Wang QM ; Du GT ; Liu Y ; Li XM |
刊名 | chinese journal of electronics
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出版日期 | 2000 |
卷号 | 9期号:1页码:21-24 |
关键词 | semiconductor lasers photonics epitaxial growth optical switch VERTICAL-CAVITY LASERS OXIDATION |
ISSN号 | 1022-4653 |
通讯作者 | kang xj,chinese acad sci,inst semicond,state key lab integrated optoelect,beijing 100083,peoples r china. |
中文摘要 | the hybrid integrated photonic switch and not logic gate based on the integration of a gaas vcsel (vertical cavity surface emitting lasers) and a miss (metal-insulator-semiconductor switches) device are reported. the gaas vcsel is fabricated by selective etching and selective oxidation. the ultra-thin semi-insulating layer (uti) of the gaas miss is formed by using oxidation of a1as that is grown by mbe. the accurate control of uti and the processing compatibility between vcsel and miss are solved by this procedure. ifa vcsel is connected in series with a miss, the integrated device can be used as a photonic switch, or a light amplifier. a low switching power (10 mu w) and a good on-off ratio (17 db contrast) have been achieved. if they are connected in parallel, they perform a photonic not gate operation. |
学科主题 | 半导体器件 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
源URL | [http://ir.semi.ac.cn/handle/172111/12594] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Kang XJ,Lin SM,Liao QW,et al. Photonic switch and NOT logic gate based on the hybrid integration of a GaAsVCSEL and a GaAs MISS[J]. chinese journal of electronics,2000,9(1):21-24. |
APA | Kang XJ.,Lin SM.,Liao QW.,Cheng P.,Gao JH.,...&Li XM.(2000).Photonic switch and NOT logic gate based on the hybrid integration of a GaAsVCSEL and a GaAs MISS.chinese journal of electronics,9(1),21-24. |
MLA | Kang XJ,et al."Photonic switch and NOT logic gate based on the hybrid integration of a GaAsVCSEL and a GaAs MISS".chinese journal of electronics 9.1(2000):21-24. |
入库方式: OAI收割
来源:半导体研究所
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