中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Photonic switch and NOT logic gate based on the hybrid integration of a GaAsVCSEL and a GaAs MISS

文献类型:期刊论文

作者Kang XJ ; Lin SM ; Liao QW ; Cheng P ; Gao JH ; Liu SA ; Wang HJ ; Zhang CH ; Wang QM ; Du GT ; Liu Y ; Li XM
刊名chinese journal of electronics
出版日期2000
卷号9期号:1页码:21-24
关键词semiconductor lasers photonics epitaxial growth optical switch VERTICAL-CAVITY LASERS OXIDATION
ISSN号1022-4653
通讯作者kang xj,chinese acad sci,inst semicond,state key lab integrated optoelect,beijing 100083,peoples r china.
中文摘要the hybrid integrated photonic switch and not logic gate based on the integration of a gaas vcsel (vertical cavity surface emitting lasers) and a miss (metal-insulator-semiconductor switches) device are reported. the gaas vcsel is fabricated by selective etching and selective oxidation. the ultra-thin semi-insulating layer (uti) of the gaas miss is formed by using oxidation of a1as that is grown by mbe. the accurate control of uti and the processing compatibility between vcsel and miss are solved by this procedure. ifa vcsel is connected in series with a miss, the integrated device can be used as a photonic switch, or a light amplifier. a low switching power (10 mu w) and a good on-off ratio (17 db contrast) have been achieved. if they are connected in parallel, they perform a photonic not gate operation.
学科主题半导体器件
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/12594]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Kang XJ,Lin SM,Liao QW,et al. Photonic switch and NOT logic gate based on the hybrid integration of a GaAsVCSEL and a GaAs MISS[J]. chinese journal of electronics,2000,9(1):21-24.
APA Kang XJ.,Lin SM.,Liao QW.,Cheng P.,Gao JH.,...&Li XM.(2000).Photonic switch and NOT logic gate based on the hybrid integration of a GaAsVCSEL and a GaAs MISS.chinese journal of electronics,9(1),21-24.
MLA Kang XJ,et al."Photonic switch and NOT logic gate based on the hybrid integration of a GaAsVCSEL and a GaAs MISS".chinese journal of electronics 9.1(2000):21-24.

入库方式: OAI收割

来源:半导体研究所

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