Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions
文献类型：期刊论文
| 作者 | Hayakawa Y ; Okano Y ; Hirata A ; Imaishi N ; Kumagiri Y ; Zhong X ; Xie X ; Yuan B ; Wu F ; Liu H ; Yamaguchi T ; Kumagawa M |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 213期号:1-2页码:40-50 |
| 关键词 | microgravity Chinese recoverable satellite GaSb InxGa1-xSb dissolution recrystallization orientation FLOATING-ZONE GROWTH INXGA1-XSB CRYSTALS GASB MELT INSB DIFFUSION SILICON CONVECTION STRIATION |
| ISSN号 | 0022-0248 |
| 通讯作者 | hayakawa y,shizuoka univ,elect res inst,3-5-1 johoku,hamamatsu,shizuoka 4328011,japan. |
| 中文摘要 | the effects of gravity and crystal orientation on the dissolution of gasb into insb melt and the recrystallization of ingasb were investigated under microgravity condition using a chinese recoverable satellite and under normal gravity condition on earth. to investigate the effect of gravity on the solid/liquid interface and compositional profiles. a numerical simulation was carried out. the insb crystal melted at 525 degrees c and then a part of gasb dissolved into the insb melt during heating to 706 degrees c and this process led to the formation of ingasb solution. ingasb solidified during the cooling process. the experimental and calculation results clearly show that the shape of the solid/liquid interface and compositional profiles in the solution were significantly affected by gravity. under microgravity, as the ga compositional profiles were uniform in the radial direction. the interfaces were almost parallel. on the contrary, for normal gravity condition, as large amounts of ga moved up in the upper region due to buoyancy, the dissolved zone broadened towards gravitational direction. also. during the cooling process, needle crystals of ingasb started appearing and the value of x of inxga1-xsb crystals increased with the decrease of temperature. the gasb with the (111)b plane dissolved into the insb melt much more than that of the (111)a plane. (c) 2000 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12600]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Hayakawa Y,Okano Y,Hirata A,et al. Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions[J]. journal of crystal growth,2000,213(1-2):40-50. |
| APA | Hayakawa Y.,Okano Y.,Hirata A.,Imaishi N.,Kumagiri Y.,...&Kumagawa M.(2000).Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions.journal of crystal growth,213(1-2),40-50. |
| MLA | Hayakawa Y,et al."Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions".journal of crystal growth 213.1-2(2000):40-50. |
入库方式： OAI收割
来源：半导体研究所
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