Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots
文献类型：期刊论文
| 作者 | Xu B
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 213期号:1-2页码:193-197 |
| 关键词 | quantum dots InGaAs overgrowth layer photoluminescence molecular beam epitaxy 1.3 MU-M ROOM-TEMPERATURE PHOTOLUMINESCENCE LINEWIDTH EMISSION LASERS ENERGY |
| ISSN号 | 0022-0248 |
| 通讯作者 | liu hy,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | we have studied the optical and structural properties of inas/gaas qds covered by inxga1-xas (0 less than or equal to x less than or equal to 0.3) layer using transmission electron microscopy, photoluminescence (pl) spectra and atomic force microscopy. we find that the strain reduces in the growth direction of inas islands covered by ingaas instead of gaas layer. significant redshift of pl peak energy and narrowing of pl linewidth are observed for the inas qds covered by 3 nm thick ingaas layer. in addition, atomic force microscopy measurements indicate that the ingaas islands will nucleate on top of inas quantum dots, when 3 nm in0.3ga0.7as overgrowth layer is deposited. this result can well explain the pl intensify degradation and linewidth increment of quantum dots with a higher in-mole-fraction ingaas layer. the energy gap change of inas qds covered by ingaas may be explained in terms of reducing strain, suppressing compositional mixing and increasing island height. (c) 2000 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12602]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots[J]. journal of crystal growth,2000,213(1-2):193-197. |
| APA | Xu B.(2000).Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots.journal of crystal growth,213(1-2),193-197. |
| MLA | Xu B."Effect of In-mole-fraction in InGaAs overgrowth layer on self-assembled InAs/GaAs quantum dots".journal of crystal growth 213.1-2(2000):193-197. |
入库方式： OAI收割
来源：半导体研究所
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