Optical characterization of high-purity cubic GaN grown on GaAs (001) substrate by metalorganic chemical vapor deposition
文献类型：期刊论文
| 作者 | Zhao DG
|
| 刊名 | applied physics letters
 |
| 出版日期 | 2000 |
| 卷号 | 76期号:21页码:3025-3027 |
| 关键词 | MOLECULAR-BEAM EPITAXY PHOTOLUMINESCENCE |
| ISSN号 | 0003-6951 |
| 通讯作者 | yang h,chinese acad sci,inst semicond,state key lab integrated optoelect,beijing 100083,peoples r china. |
| 中文摘要 | the optical properties of cubic gan films have been investigated in the temperature range of 10-300 k. five peaks were observed at 10 k. from the dependence of photoluminescence emissions on the temperature and excitation intensity, we have assigned two of the five peaks (2.926 and 2.821 ev) to donor-acceptor pair (dap) transitions. furthermore, these two peaks were found to be related to a common shallow donor involved in the peak position previously reported at 3.150 ev. the intensities of dap transitions were much weaker than that of excitonic emission even at low temperature, indicating a relatively high purity of our samples. (c) 2000 american institute of physics. [s0003-6951(00)00921-9]. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12606]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao DG. Optical characterization of high-purity cubic GaN grown on GaAs (001) substrate by metalorganic chemical vapor deposition[J]. applied physics letters,2000,76(21):3025-3027. |
| APA | Zhao DG.(2000).Optical characterization of high-purity cubic GaN grown on GaAs (001) substrate by metalorganic chemical vapor deposition.applied physics letters,76(21),3025-3027. |
| MLA | Zhao DG."Optical characterization of high-purity cubic GaN grown on GaAs (001) substrate by metalorganic chemical vapor deposition".applied physics letters 76.21(2000):3025-3027. |
入库方式： OAI收割
来源：半导体研究所
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