Syntheses, crystallographic and magnetic properties of Nd3Fe29-xCrx and other associated compounds
文献类型：期刊论文
| 作者 | Han XF ; Miyazaki T ; Wang QY ; Wang J ; Zan Y ; Lin LY |
| 刊名 | journal of materials science & technology
 |
| 出版日期 | 2000 |
| 卷号 | 16期号:3页码:261-268 |
| ISSN号 | 1005-0302 |
| 关键词 | R = Y CRYSTAL-FIELD INTERACTIONS AC-SUSCEPTIBILITY COMPOUNDS R=Y SM ND GD TB DY CE |
| 通讯作者 | han xf,tohoku univ,dept appl phys,fac engn,sendai,miyagi 98077,japan. |
| 中文摘要 | a systematic study of syntheses and magnetic properties of the nd-3 fe29-xcrx (x=4.5, 4.7, 5.0, and 5.5) compounds has been performed. the single-phase compounds of nd3fe29-xcrx can be formed in the range 4.5 less than or equal to x less than or equal to 5.5. the curie temperature tc, the saturation magnetization m-s at 4.2 k, the anisotropy field h-a at 4.2 k and room temperature, and the intra-sublattice exchange coupling parameter j(fefe) at 4.2 k for the nd3fe29-xcrx compounds decrease with increasing cr composition from x=4.5 to 5.5, respectively. nitrogenation and carbonation, unlike hydrogenation, result mainly in improvements of the curie temperature, the saturation magnetization and the anisotropy field at 4.2 k and room temperature for the nd3fe29-xcrx compounds compared with their parent compounds. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12620]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Han XF,Miyazaki T,Wang QY,et al. Syntheses, crystallographic and magnetic properties of Nd3Fe29-xCrx and other associated compounds[J]. journal of materials science & technology,2000,16(3):261-268. |
| APA | Han XF,Miyazaki T,Wang QY,Wang J,Zan Y,&Lin LY.(2000).Syntheses, crystallographic and magnetic properties of Nd3Fe29-xCrx and other associated compounds.journal of materials science & technology,16(3),261-268. |
| MLA | Han XF,et al."Syntheses, crystallographic and magnetic properties of Nd3Fe29-xCrx and other associated compounds".journal of materials science & technology 16.3(2000):261-268. |
入库方式： OAI收割
来源：半导体研究所
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