Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(001) substrates
文献类型：期刊论文
| 作者 | Zhao DG
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 212期号:3-4页码:397-401 |
| 关键词 | III-V semiconductor MOCVD RHEED XRDCD SAPPHIRE |
| ISSN号 | 0022-0248 |
| 通讯作者 | sun xl,chinese acad sci,inst semicond,natl res ctr optoelect technol,beijing 100083,peoples r china. |
| 中文摘要 | in this letter, we investigated the effect of the buffer layer growth conditions on the secondary hexagonal phase content in cubic gan films on gaas(0 0 1) substrate. the reflection high-energy electron diffraction (rheed) pattern of the low-temperature gan buffer layers shows that both the deposition temperature and time are important in obtaining a smooth surface. four-circle x-ray double-crystal diffraction (xrdcd) reciprocal space mapping was used to study the hexagonal phase inclusions in the cubic gan (c-gan) films grown on the buffer layers. the calculation of the volume contents of the hexagonal phase shows that higher temperature and longer time deposition of the buffer layer is not preferable for growing pure c-gan film. under optimized condition, 47 mev fwhm of near band gap emission of the c-gan film was achieved. (c) 2000 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12622]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao DG. Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(001) substrates[J]. journal of crystal growth,2000,212(3-4):397-401. |
| APA | Zhao DG.(2000).Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(001) substrates.journal of crystal growth,212(3-4),397-401. |
| MLA | Zhao DG."Effect of buffer layer growth conditions on the secondary hexagonal phase content in cubic GaN films on GaAs(001) substrates".journal of crystal growth 212.3-4(2000):397-401. |
入库方式： OAI收割
来源：半导体研究所
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