Polycrystalline silicon films prepared by improved pulsed rapid thermal annealing
文献类型：期刊论文
| 作者 | Zhao YW ; Wang WJ ; Yun F ; Xu Y ; Liao XB ; Ma ZX ; Yue GH ; Kong GL |
| 刊名 | solar energy materials and solar cells
 |
| 出版日期 | 2000 |
| 卷号 | 62期号:1-2页码:143-148 |
| 关键词 | pulsed rapid thermal annealing (PRTA) solid-phase crystallization (SPC) a-Si film polycrystalline Si film AMORPHOUS-SILICON CRYSTALLIZATION TRANSISTORS |
| ISSN号 | 0927-0248 |
| 通讯作者 | zhao yw,beijing solar energy res inst,beijing 100083,peoples r china. |
| 中文摘要 | an improved pulsed rapid thermal annealing (prta) has been used for the solid-phase crystallization (spc) of a-si films prepared by pecvd. the spc can be completed with time-temperature budgets such as 10 cycles of 60-s 550 degrees c thermal bias/1-s 850 degrees c thermal pulse. the microstructure and surface morphology of the crystallized films are investigated by x-ray diffraction (xrd). the results indicate that this prta is a suitable post-crystallization technique for fabricating large-area poly-si films on low-cost substrate. (c) 2000 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12624]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao YW,Wang WJ,Yun F,et al. Polycrystalline silicon films prepared by improved pulsed rapid thermal annealing[J]. solar energy materials and solar cells,2000,62(1-2):143-148. |
| APA | Zhao YW.,Wang WJ.,Yun F.,Xu Y.,Liao XB.,...&Kong GL.(2000).Polycrystalline silicon films prepared by improved pulsed rapid thermal annealing.solar energy materials and solar cells,62(1-2),143-148. |
| MLA | Zhao YW,et al."Polycrystalline silicon films prepared by improved pulsed rapid thermal annealing".solar energy materials and solar cells 62.1-2(2000):143-148. |
入库方式： OAI收割
来源：半导体研究所
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