Photoluminescence in Si and Be directly doped self-organized InAs/GaAs quantum dots
文献类型：期刊论文
| 作者 | Wang HL ; Yang FH ; Feng SL |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 212期号:1-2页码:35-38 |
| 关键词 | dopant InAs/GaAs self-organized quantum dots MBE PL INFRARED-ABSORPTION INAS ISLANDS GROWTH GAAS |
| ISSN号 | 0022-0248 |
| 通讯作者 | wang hl,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china. |
| 中文摘要 | we report on the photoluminescence in directly si- and be-doped self-organized inas/gaas quantum dots (qds). when the doping level is low, a decrease in linewidth is observed. however, it will decrease the uniformity and photoluminescence peak intensity of qds when the doping level is high. we relate this phenomenon to a model that takes the si or be atoms as the nucleation centers for the formation of qds. (c) 2000 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12626]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang HL,Yang FH,Feng SL. Photoluminescence in Si and Be directly doped self-organized InAs/GaAs quantum dots[J]. journal of crystal growth,2000,212(1-2):35-38. |
| APA | Wang HL,Yang FH,&Feng SL.(2000).Photoluminescence in Si and Be directly doped self-organized InAs/GaAs quantum dots.journal of crystal growth,212(1-2),35-38. |
| MLA | Wang HL,et al."Photoluminescence in Si and Be directly doped self-organized InAs/GaAs quantum dots".journal of crystal growth 212.1-2(2000):35-38. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。