Effect of rapid thermal annealing on InGaAs/GaAs quantum wells
文献类型：期刊论文
| 作者 | Zhuang QD ; Li JM ; Zeng YP ; Yoon SF ; Zheng HQ ; Kong MY ; Lin LY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 212期号:1-2页码:352-355 |
| 关键词 | annealing InGaAs/GaAs quantum wells interdiffusion quantum dots MBE DOT SUPERLATTICE |
| ISSN号 | 0022-0248 |
| 通讯作者 | zhuang qd,nanyang technol univ,sch elect & elect engn,microelect div,nanyang ave,singapore 639798,singapore. |
| 中文摘要 | we have studied the effect of rapid thermal annealing (rta) on highly strained ingaas/gaas quantum wells by using photoluminescence (pl) and double-crystal x-ray diffraction (dcxrd) measurements. it is found that a distinct additional pl emission peak can be observed for the annealed samples. this pl emission possesses features similar to the pl emission from ingaas/gaas quantum dots (qds) with the same indium content. it is proposed that this emission stems from qds, which were formed during the annealing process. this formation is attributed to the favorable diffusion due to the inhomogeneous strain distribution in the ingaas layer intersurface. the dcxrd measurements also confirm that the dominant relaxation is strain enhanced diffusion under the low annealing temperatures. (c) 2000 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12628]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhuang QD,Li JM,Zeng YP,et al. Effect of rapid thermal annealing on InGaAs/GaAs quantum wells[J]. journal of crystal growth,2000,212(1-2):352-355. |
| APA | Zhuang QD.,Li JM.,Zeng YP.,Yoon SF.,Zheng HQ.,...&Lin LY.(2000).Effect of rapid thermal annealing on InGaAs/GaAs quantum wells.journal of crystal growth,212(1-2),352-355. |
| MLA | Zhuang QD,et al."Effect of rapid thermal annealing on InGaAs/GaAs quantum wells".journal of crystal growth 212.1-2(2000):352-355. |
入库方式： OAI收割
来源：半导体研究所
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