The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53Ga0.47As multilayer on InP substrate
文献类型：期刊论文
| 作者 | Ye XL ; Xu B
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 212期号:1-2页码:360-363 |
| 关键词 | self-organized quantum dots InAs/In0.53Ga0.47As multilayer InP substrate MBE MOLECULAR-BEAM-EPITAXY INAS ISLANDS GROWTH MATRIX GAAS |
| ISSN号 | 0022-0248 |
| 通讯作者 | sun zz,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | self-organized inas/in0.53ga0.47as quantum dot (qd) multilayers were grown on inp substrate by molecular beam epitaxy. the structural and optical properties were characterized by using cross-sectional transmission electron microscopy (tem) and photoluminescence (pl), respectively. vertically aligned inas quantum dots multilayer on inp substrate is demonstrated for the first time. photoluminescence with a line width of similar to 26 mev was observed from the qds multilayer. (c) 2000 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12632]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Ye XL,Xu B. The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53Ga0.47As multilayer on InP substrate[J]. journal of crystal growth,2000,212(1-2):360-363. |
| APA | Ye XL,&Xu B.(2000).The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53Ga0.47As multilayer on InP substrate.journal of crystal growth,212(1-2),360-363. |
| MLA | Ye XL,et al."The structural and photoluminescence properties of self-organized quantum dots in InAs/In0.53Ga0.47As multilayer on InP substrate".journal of crystal growth 212.1-2(2000):360-363. |
入库方式： OAI收割
来源：半导体研究所
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