Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy
文献类型：期刊论文
| 作者 | Yu F
|
| 刊名 | materials science and engineering b-solid state materials for advanced technology
 |
| 出版日期 | 2000 |
| 卷号 | 72期号:2-3页码:189-192 |
| 关键词 | solid phase epitaxy silicon on sapphire (SOS) carrier mobility |
| ISSN号 | 0921-5107 |
| 通讯作者 | wang qy,chinese acad sci,inst semicond,beijing 100083,peoples r china. |
| 中文摘要 | the increased emphasis on sub-micron cmos/sos devices has placed a demand for high quality thin silicon on sapphire (sos) films with thickness of the order 100-200 nm. it is demonstrated that the crystalline quality of as-grown thin sos films by the cvd method can be greatly improved by solid phase epitaxy (spe) process: implantation of self-silicon ions and subsequent thermal annealing. subsequent regrowth of this amorphous layer leads to a greater improvement in silicon layer crystallinity and channel carrier mobility, evidenced, respectively, by double crystal x-ray diffraction and electrical measurements. we concluded that the thin spe sos films are suitable for application to high-performance cmos circuitry. (c) 2000 elsevier science s.a. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12648]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Yu F. Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy[J]. materials science and engineering b-solid state materials for advanced technology,2000,72(2-3):189-192. |
| APA | Yu F.(2000).Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy.materials science and engineering b-solid state materials for advanced technology,72(2-3),189-192. |
| MLA | Yu F."Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy".materials science and engineering b-solid state materials for advanced technology 72.2-3(2000):189-192. |
入库方式： OAI收割
来源：半导体研究所
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