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Anomaly of the current self-oscillation frequency in the sequential tunneling of a doped GaAs/AlAs superlattice

文献类型:期刊论文

作者Jiang DS
刊名physical review b
出版日期2000
卷号61期号:11页码:7261-7264
关键词GAAS-ALAS SUPERLATTICES ELECTRIC-FIELD DOMAINS MULTIPLE QUANTUM-WELLS SEMICONDUCTOR SUPERLATTICES ROOM-TEMPERATURE DIODES MODEL INSTABILITIES TRANSPORT
ISSN号1098-0121
通讯作者wang xr,hong kong univ sci & technol,dept phys,clear water bay,hong kong,hong kong,peoples r china.
中文摘要an anomalous behavior of the current self-oscillation frequency is observed in the dynamic de voltage bands, emerging from each sawtoothlike branch of the current-voltage characteristic of a doped gaas/a1as superlattice in the transition process from static to dynamic electric field domain formations. varying the applied de voltage at a fixed temperature, we find that the frequency increases while the averaged current decreases. inside each voltage band, the frequency has a strong voltage dependence in the temperature range where the averaged current changes with the applied de voltage. this dependence can be understood in terms of motion of the system along a limit cycle.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/12652]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
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Jiang DS. Anomaly of the current self-oscillation frequency in the sequential tunneling of a doped GaAs/AlAs superlattice[J]. physical review b,2000,61(11):7261-7264.
APA Jiang DS.(2000).Anomaly of the current self-oscillation frequency in the sequential tunneling of a doped GaAs/AlAs superlattice.physical review b,61(11),7261-7264.
MLA Jiang DS."Anomaly of the current self-oscillation frequency in the sequential tunneling of a doped GaAs/AlAs superlattice".physical review b 61.11(2000):7261-7264.

入库方式: OAI收割

来源:半导体研究所

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