Investigation of the polyetherketone guest-host DR1/PEK-c polymer films by real-time monitoring of the second-harmonic generation
文献类型:期刊论文
作者 | Shi W ; Xu ZL ; Fang CS ; Pan QW ; Gu QT ; Xu D ; Wei HZ ; Yu JZ |
刊名 | optics and lasers in engineering |
出版日期 | 1999 |
卷号 | 32期号:2页码:139-145 |
ISSN号 | 0143-8166 |
关键词 | polymer films second-harmonic generation poling nonlinear optical coefficient 2ND-HARMONIC GENERATION NONLINEARITY CHROMOPHORE CONSTANT SYSTEMS FIELD |
通讯作者 | shi w,shandong univ,state key lab crystal mat,jinan 250100,peoples r china. |
中文摘要 | the real-time monitoring of the second-harmonic generation (shg) was used to optimize the poling condition and to study the nonlinear optical (nlo) properties of the polyetherketone (pek-c) guest-host polymer films. the high second-order nlo coefficient chi(33)((2)) = 11.02 pm/v measured at 1.064 mu m was achieved when the weight percent of dr1 guest in the polymer system is 20%. the nlo activity of the poled dr1/pek-c polymer film can maintain more than 80% of its initial value when temperature is under 100 degrees c, and the normalized second-order nlo coefficient can maintain more than 85% after 2400 s at 80 degrees c. (c) 2000 elsevier science ltd. all rights reserved. |
学科主题 | 光电子学 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
源URL | [http://ir.semi.ac.cn/handle/172111/12654] |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Shi W,Xu ZL,Fang CS,et al. Investigation of the polyetherketone guest-host DR1/PEK-c polymer films by real-time monitoring of the second-harmonic generation[J]. optics and lasers in engineering,1999,32(2):139-145. |
APA | Shi W.,Xu ZL.,Fang CS.,Pan QW.,Gu QT.,...&Yu JZ.(1999).Investigation of the polyetherketone guest-host DR1/PEK-c polymer films by real-time monitoring of the second-harmonic generation.optics and lasers in engineering,32(2),139-145. |
MLA | Shi W,et al."Investigation of the polyetherketone guest-host DR1/PEK-c polymer films by real-time monitoring of the second-harmonic generation".optics and lasers in engineering 32.2(1999):139-145. |
入库方式: OAI收割
来源:半导体研究所
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