Nitrogen vacancy scattering in n-GaN grown by metal-organic vapor phase epitaxy
文献类型：期刊论文
| 作者 | Zhu QS ; Sawaki N |
| 刊名 | applied physics letters
 |
| 出版日期 | 2000 |
| 卷号 | 76期号:12页码:1594-1596 |
| 关键词 | LAYER |
| ISSN号 | 0003-6951 |
| 通讯作者 | zhu qs,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | electron mobility limited by nitrogen vacancy scattering was taken into account to evaluate the quality of n-type gan grown by metal-organic vapor phase epitaxy. the nitrogen vacancy scattering potential used for our mobility calculation has to satisfy two requirements: such potential is (1) spatially short range, and (2) finite and not divergent at the vacancy core. a square-well potential was adopted to calculate the mobility, because it satisfies not only these two requirements, but also simplifies the calculation. as a result, the estimated mobility shows a t-1/2 temperature dependence, and is very sensitive to the potential well width. after introducing the nitrogen vacancy scattering, we obtained the best fitting between the calculated and experimental results for our high quality sample, and it was found that the measured mobility is dominated by ion impurity and dislocation scatterings at the low temperatures, but dominated by optical phonon and nitrogen vacancy scatterings at the high temperatures. (c) 2000 american institute of physics. [s0003-6951(00)04112-7]. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12660]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhu QS,Sawaki N. Nitrogen vacancy scattering in n-GaN grown by metal-organic vapor phase epitaxy[J]. applied physics letters,2000,76(12):1594-1596. |
| APA | Zhu QS,&Sawaki N.(2000).Nitrogen vacancy scattering in n-GaN grown by metal-organic vapor phase epitaxy.applied physics letters,76(12),1594-1596. |
| MLA | Zhu QS,et al."Nitrogen vacancy scattering in n-GaN grown by metal-organic vapor phase epitaxy".applied physics letters 76.12(2000):1594-1596. |
入库方式： OAI收割
来源：半导体研究所
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