Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots
文献类型：期刊论文
| 作者 | Wang HL ; Yang FH ; Feng SL ; Zhu HJ ; Ning D ; Wang H ; Wang XD |
| 刊名 | physical review b
 |
| 出版日期 | 2000 |
| 卷号 | 61期号:8页码:5530-5534 |
| 关键词 | ELECTRONIC-STRUCTURE CARRIER RELAXATION ENERGY-LEVELS SPECTROSCOPY |
| ISSN号 | 1098-0121 |
| 通讯作者 | feng sl,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | the energy barrier at inas/gaas interface due to the built-in strain in self-organized system has been determined experimentally. such a barrier has been predicted by previous theories. from the deep-level transient spectroscopy (dlts) measurements, we have obtained the electron and hole energy levels of quantum dots e-e(qd-->gaas) = 0.13 ev and e-h(qd-->gaas) = 0.09 ev relative to the bulk unstrained gaas band edges e-c and e-v. dlts measurements have also provided evidence to the existence of the capture barriers of quantum dots for electron e-eb = 0.30 ev and hole e-hb = 0.26 ev. the barriers can be explained by the apexes appearing in the interface between inas and gaas caused by strain. combining the photoluminescence results, the band structures of inas and gaas have been determined. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12670]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang HL,Yang FH,Feng SL,et al. Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots[J]. physical review b,2000,61(8):5530-5534. |
| APA | Wang HL.,Yang FH.,Feng SL.,Zhu HJ.,Ning D.,...&Wang XD.(2000).Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots.physical review b,61(8),5530-5534. |
| MLA | Wang HL,et al."Experimental determination of local Strain effect on InAs/GaAs self-organized quantum dots".physical review b 61.8(2000):5530-5534. |
入库方式： OAI收割
来源：半导体研究所
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