中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Steady and transient optical properties of cubic InGaN epilayers

文献类型:期刊论文

作者Xu ZY ; Liu BL ; Li SF ; Yang H ; Ge WK
刊名journal of infrared and millimeter waves
出版日期2000
卷号19期号:1页码:11-14
关键词InGaN exciton localization time-resolved photoluminescence GAN
ISSN号1001-9014
通讯作者xu zy,chinese acad sci,inst semicond,beijing 100083,peoples r china.
中文摘要photoluminescence (pl) and time-resolved pi, were employed to study the steady and transient optical properties of cubic inxga1-xn epilayers grown by mbe. the results suggest that the pl transitions in ingan epilayers are mainly from localized exciton states. the localization energies are estimated to be 60 mev, independent of in composition. the pl decay is characterized by a hi-exponential dependence. the fast process (50 ps at 12k) is related to the fast relaxation of excitons, while a slower contribution (200-270 ps at 12k) is attributed to the decay process of localized excitons.
学科主题光电子学
收录类别SCI
语种中文
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/12674]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Xu ZY,Liu BL,Li SF,et al. Steady and transient optical properties of cubic InGaN epilayers[J]. journal of infrared and millimeter waves,2000,19(1):11-14.
APA Xu ZY,Liu BL,Li SF,Yang H,&Ge WK.(2000).Steady and transient optical properties of cubic InGaN epilayers.journal of infrared and millimeter waves,19(1),11-14.
MLA Xu ZY,et al."Steady and transient optical properties of cubic InGaN epilayers".journal of infrared and millimeter waves 19.1(2000):11-14.

入库方式: OAI收割

来源:半导体研究所

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