The investigations on semi-insulating GaAs by surface photovoltaic spectroscopy
文献类型：期刊论文
| 作者 | Jiang DS
|
| 刊名 | journal of infrared and millimeter waves
 |
| 出版日期 | 2000 |
| 卷号 | 19期号:1页码:15-18 |
| 关键词 | surface photovoltaic spectroscopy SI-GaAs nondetructive technique UNDOPED SEMIINSULATING GAAS |
| ISSN号 | 1001-9014 |
| 通讯作者 | chen yb,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china. |
| 中文摘要 | the surface photovoltage (spv) effect induced by the defect states in semi-insulating (si) gaas was studied. the pv response below the band edge was measured at room temperature with a de optical biasing. the spectra were found to be strongly dependent on the surface recombination and were attributed to formation of the carrier concentration gradient near the surface region, showing that spv is a very sensitive and nondestructive technique for characterizing the surface quality of the si-gaas wafers. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12676]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Jiang DS. The investigations on semi-insulating GaAs by surface photovoltaic spectroscopy[J]. journal of infrared and millimeter waves,2000,19(1):15-18. |
| APA | Jiang DS.(2000).The investigations on semi-insulating GaAs by surface photovoltaic spectroscopy.journal of infrared and millimeter waves,19(1),15-18. |
| MLA | Jiang DS."The investigations on semi-insulating GaAs by surface photovoltaic spectroscopy".journal of infrared and millimeter waves 19.1(2000):15-18. |
入库方式： OAI收割
来源：半导体研究所
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