Photoluminescence study of multilayer In0.55Al0.45As/Al0.5Ga0.5As quantum dot at various temperature
文献类型：期刊论文
| 作者 | Chen Y ; Zhang W ; Li GH ; Zhu ZM ; Han HX ; Wang ZP ; Zhou W ; Wang ZG |
| 刊名 | journal of infrared and millimeter waves
 |
| 出版日期 | 2000 |
| 卷号 | 19期号:1页码:19-23 |
| 关键词 | quantum dot photoluminescence wetting layer EXCITON LOCALIZATION WELLS |
| ISSN号 | 1001-9014 |
| 通讯作者 | chen y,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china. |
| 中文摘要 | the photoluminescence of self-assembled multilayer in0.55al0.45as/al0.5ga0.5as quantum dot (qd) was measured at various temperatures. strong photoluminescence of wetting layer (wl) and quantum dots were observed at the same time. furthermore, direct excitons thermal transfer process between the wetting layer and quantum dots was observed. in the study of temperature dependence of pl intensity it was found that the pl peak of wetting layer contains two quenching processes: at low temperature, excitons are thermally activated from localized states to extended two-dimensional states and then trapped by qds; at high temperature excitons quench through the x valley of barriers. using rate equation excitons thermal transfer and quenching processes were analyzed quantitatively. |
| 学科主题 | 光电子学 |
| 收录类别 | SCI |
| 语种 | 中文 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12678]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen Y,Zhang W,Li GH,et al. Photoluminescence study of multilayer In0.55Al0.45As/Al0.5Ga0.5As quantum dot at various temperature[J]. journal of infrared and millimeter waves,2000,19(1):19-23. |
| APA | Chen Y.,Zhang W.,Li GH.,Zhu ZM.,Han HX.,...&Wang ZG.(2000).Photoluminescence study of multilayer In0.55Al0.45As/Al0.5Ga0.5As quantum dot at various temperature.journal of infrared and millimeter waves,19(1),19-23. |
| MLA | Chen Y,et al."Photoluminescence study of multilayer In0.55Al0.45As/Al0.5Ga0.5As quantum dot at various temperature".journal of infrared and millimeter waves 19.1(2000):19-23. |
入库方式： OAI收割
来源：半导体研究所
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