The new exploration for proton-implanted silicon: the conversion of a surface-region-purification-induced p-n junction into a p-i-n electrical structure approaching silicon on insulator
文献类型：期刊论文
| 作者 | Li JM |
| 刊名 | semiconductor science and technology
 |
| 出版日期 | 2000 |
| 卷号 | 15期号:2页码:l6-l9 |
| 关键词 | ION-IMPLANTATION HYDROGEN OXYGEN |
| ISSN号 | 0268-1242 |
| 通讯作者 | li jm,chinese acad sci,inst semicond,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | a surface-region-purification-induced p-n junction, a puzzle discovered at brookhaven national laboratory, in a silicon-on-defect-layer (sodl) material has been explored by carrying out various annealing conditions and subsequent measurements on electrical properties. the origin of the pn junction has been experimentally investigated. furthermore, the p-n junction has been transformed into a p-i-n electrical structure by adding a high temperature annealing process to the previously used sodl procedure, making the sodl material approach silicon on insulator (soi). the control of the initial oxygen amount in the silicon material is suggested to be critical for the experimental results. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12680]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Li JM. The new exploration for proton-implanted silicon: the conversion of a surface-region-purification-induced p-n junction into a p-i-n electrical structure approaching silicon on insulator[J]. semiconductor science and technology,2000,15(2):l6-l9. |
| APA | Li JM.(2000).The new exploration for proton-implanted silicon: the conversion of a surface-region-purification-induced p-n junction into a p-i-n electrical structure approaching silicon on insulator.semiconductor science and technology,15(2),l6-l9. |
| MLA | Li JM."The new exploration for proton-implanted silicon: the conversion of a surface-region-purification-induced p-n junction into a p-i-n electrical structure approaching silicon on insulator".semiconductor science and technology 15.2(2000):l6-l9. |
入库方式： OAI收割
来源：半导体研究所
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