中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Quantum-confinement-effect-driven type-I-type-II transition in inhomogeneous quantum dot structures

文献类型:期刊论文

作者Kai C
刊名physical review b
出版日期2000
卷号61期号:7页码:4743-4747
关键词SUPERLATTICES CDS/HGS/CDS WELL FILMS
ISSN号1098-0121
通讯作者kai c,chinese acad sci,inst semicond,natl lab superlattices & microstruct,pob 912,beijing 100083,peoples r china.
中文摘要we investigate the electronic structures of the inhomogeneous quantum dots within the framework of the effective mass theory. the results show that the energies of electron and hole states depend sensitively on the relative magnitude 77 of the core radius to the capped quantum dot radius. the spatial distribution of the electrons and holes vary significantly when the ratio eta changes. a quantum-confinement-driven type-ii-type-i transition is found in gaas/alxga1-xas-capped quantum dot structures. the phase diagram is obtained for different capped quantum dot radii. the ground-state exciton binding energy shows a highly nonlinear dependence on the innner structures of inhomogeneous quantum dots, which originates from the redistribution of the electron and hole wave functions.
学科主题半导体物理
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/12684]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Kai C. Quantum-confinement-effect-driven type-I-type-II transition in inhomogeneous quantum dot structures[J]. physical review b,2000,61(7):4743-4747.
APA Kai C.(2000).Quantum-confinement-effect-driven type-I-type-II transition in inhomogeneous quantum dot structures.physical review b,61(7),4743-4747.
MLA Kai C."Quantum-confinement-effect-driven type-I-type-II transition in inhomogeneous quantum dot structures".physical review b 61.7(2000):4743-4747.

入库方式: OAI收割

来源:半导体研究所

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