Growth and characterization of strained superlattices delta-GaNxAs1-x/GaAs by molecular beam epitaxy
文献类型：期刊论文
| 作者 | Pan Z ; Li LH ; Lin YW ; Zhou ZQ ; Zhang W ; Wang YT ; Wu RH |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 209期号:4页码:648-652 |
| 关键词 | GaNAs/GaAs superlattice X-ray diffraction periodicity fluctuation MBE RHEED BAND-GAP ENERGY NITROGEN ALLOYS DIFFRACTION COEFFICIENT SOLUBILITY OPERATION GAAS1-XNX GAASN |
| ISSN号 | 0022-0248 |
| 通讯作者 | pan z,chinese acad sci,inst semicond,natl res ctr optoelect technol,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | a series of superlattices delta-ganxas1-x/gaas were grown by a dc plasma-n-2-assisted molecular beam epitaxy. the evolution of the surface reconstruction during the growth has been studied with the use of in situ reflection high-energy electron diffraction. the superlattices have been characterized by high-resolution x-ray diffraction measurements. distinct satellite peaks indicate that the superlattices are of good quality. the n compositions in strained ganxas1-x monolayers are obtained from the dynamical simulations of the measured x-ray diffraction patterns. the periodicity fluctuations of n composition are obtained from a kinematical method dependent on the broadening of the satellite peaks of the x-ray diffraction. (c) 2000 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12688]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Pan Z,Li LH,Lin YW,et al. Growth and characterization of strained superlattices delta-GaNxAs1-x/GaAs by molecular beam epitaxy[J]. journal of crystal growth,2000,209(4):648-652. |
| APA | Pan Z.,Li LH.,Lin YW.,Zhou ZQ.,Zhang W.,...&Wu RH.(2000).Growth and characterization of strained superlattices delta-GaNxAs1-x/GaAs by molecular beam epitaxy.journal of crystal growth,209(4),648-652. |
| MLA | Pan Z,et al."Growth and characterization of strained superlattices delta-GaNxAs1-x/GaAs by molecular beam epitaxy".journal of crystal growth 209.4(2000):648-652. |
入库方式： OAI收割
来源：半导体研究所
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