Effect of arsenic precipitates on Fermi level in GaAs grown by molecular-beam epitaxy at low temperature
文献类型：期刊论文
| 作者 | Chen YH ; Wang ZG ; Yang Z |
| 刊名 | journal of applied physics
 |
| 出版日期 | 2000 |
| 卷号 | 87期号:6页码:2923-2925 |
| 关键词 | SPECTROSCOPY 200-DEGREES-C ABSORPTION DEFECTS |
| ISSN号 | 0021-8979 |
| 通讯作者 | chen yh,chinese acad sci,inst semicond,lab semicond mat sci,box 912,beijing 100083,peoples r china. |
| 中文摘要 | a simple model is presented to discuss the effect of as precipitates on the fermi level in gaas grown by molecular-beam epitaxy at low temperature (lt-gaas). this model implements the compensation between point defects and the depletion of arsenic precipitates. the condition that the fermi level is pinned by as precipitates is attained. the shifts of the fermi level in lt-gaas with annealing temperature are explained by our model. additionally, the role of as precipitates in conventional semi-insulating gaas is discussed. (c) 2000 american institute of physics. [s0021-8979(00)09905-9]. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12692]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen YH,Wang ZG,Yang Z. Effect of arsenic precipitates on Fermi level in GaAs grown by molecular-beam epitaxy at low temperature[J]. journal of applied physics,2000,87(6):2923-2925. |
| APA | Chen YH,Wang ZG,&Yang Z.(2000).Effect of arsenic precipitates on Fermi level in GaAs grown by molecular-beam epitaxy at low temperature.journal of applied physics,87(6),2923-2925. |
| MLA | Chen YH,et al."Effect of arsenic precipitates on Fermi level in GaAs grown by molecular-beam epitaxy at low temperature".journal of applied physics 87.6(2000):2923-2925. |
入库方式： OAI收割
来源：半导体研究所
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