Photoluminescence study of InAlAs quantum dots grown on differently oriented surfaces
文献类型：期刊论文
| 作者 | Xu B
|
| 刊名 | journal of vacuum science & technology b
 |
| 出版日期 | 2000 |
| 卷号 | 18期号:1页码:21-24 |
| 关键词 | MOLECULAR-BEAM EPITAXY 3-DIMENSIONAL ISLAND FORMATION MONOLAYER COVERAGE GAAS INAS INGAAS TEMPERATURE INXGA1-XAS ENSEMBLES GAAS(100) |
| ISSN号 | 1071-1023 |
| 通讯作者 | zhou w,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | we reported the optical properties of self-assembled in0.55al0.45as quantum dots grown by molecular beam epitaxy on (001) and (n11)a/b(n = 3,5)gaas substrates. two peaks were observed in the photoluminescence (pl) spectra from quantum dots in the (001) substrate and this suggested two sets of quantum dots different in size. for quantum dots in the high-index substrates, the pl spectra were related to the atomic-terminated surface (a or b substrate). the peaks for the b substrate surfaces were in the lower energy position than that for the (001) and a type. in addition, quantum dots in the b substrate have comparatively high quantum efficiency. these results suggested that high-index b-type substrate is more suitable for the fabrication of quantum dots than (001) and a-type substrates at the same growth condition. (c) 2000 american vacuum society. [s0734-211x(00)04701-6]. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12696]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Xu B. Photoluminescence study of InAlAs quantum dots grown on differently oriented surfaces[J]. journal of vacuum science & technology b,2000,18(1):21-24. |
| APA | Xu B.(2000).Photoluminescence study of InAlAs quantum dots grown on differently oriented surfaces.journal of vacuum science & technology b,18(1),21-24. |
| MLA | Xu B."Photoluminescence study of InAlAs quantum dots grown on differently oriented surfaces".journal of vacuum science & technology b 18.1(2000):21-24. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。