Methods to tune the electronic states of self-organized InAs/GaAs quantum dots
文献类型：期刊论文
| 作者 | Niu ZC ; Wang H; Jiang DS; Wang H
|
| 刊名 | physica b-condensed matter
 |
| 出版日期 | 2000 |
| 卷号 | 279期号:1-3页码:217-219 |
| 关键词 | quantum dot growth interruption quantum dot laser |
| ISSN号 | 0921-4526 |
| 通讯作者 | wang h,chinese acad sci,inst semicond,natl lab superlattices & microstruct,beijing 100083,peoples r china. |
| 中文摘要 | after capping inas islands with a thin enough gaas layer, growth interruption has been introduced. ejected energy of self-organized inas/gaas quantum dots has been successfully tuned in a controlled manner by changing the thickness of gaas capping layer and the time of growth interruption and inas layer thickness. the photoluminescence (pl) spectra showing the shift of the peak position reveals the tuning of the electronic states of the qd system. enhanced uniformity of quantum dots is observed judging from the decrease of full width at half maximum of fl. injection inas/gaas quantum dot lasers have been fabricated and performed on various frequencies. (c) 2000 published by elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体物理 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12698]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Niu ZC,Wang H,Jiang DS,et al. Methods to tune the electronic states of self-organized InAs/GaAs quantum dots[J]. physica b-condensed matter,2000,279(1-3):217-219. |
| APA | Niu ZC,Wang H,Jiang DS,&Wang H.(2000).Methods to tune the electronic states of self-organized InAs/GaAs quantum dots.physica b-condensed matter,279(1-3),217-219. |
| MLA | Niu ZC,et al."Methods to tune the electronic states of self-organized InAs/GaAs quantum dots".physica b-condensed matter 279.1-3(2000):217-219. |
入库方式： OAI收割
来源：半导体研究所
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