Initial stages of GaN/GaAs (100) growth by metalorganic chemical vapor deposition
文献类型：期刊论文
| 作者 | Zhao DG
|
| 刊名 | journal of electronic materials
 |
| 出版日期 | 2000 |
| 卷号 | 29期号:2页码:177-182 |
| 关键词 | cubic GaN hexagonal GaN buffer layer AFM RHEED CUBIC GAN FILMS GAAS DEPENDENCE NITRIDE LAYERS |
| ISSN号 | 0361-5235 |
| 通讯作者 | xu dp,chinese acad sci,inst semicond,natl res ctr optoelect technol,beijing 100864,peoples r china. |
| 中文摘要 | we have investigated the growth of gan buffers by metalorganic chemical vapor deposition (mocvd) on gaas (100) substrates. atomic force microscope (afm) and reflection high-energy electron diffraction (rheed) were employed to study the dependence of the nucleation on the growth temperature, growth rate, annealing effect, and growth time. a two-step growth sequence must be used to optimize and control the nucleation and the subsequent growth independently. the size and distribution of islands and the thickness of buffer layers have a crucial role on the quality of gan layers. based on the experimental results, a model was given to interpret the formation of hexagonal-phase gan in the cubic-phase gan layers. using an optimum buffer layer, the strong near-band emission of cubic gan with full-width at half maximum (fwhm) value as small as 5.6 nm was observed at room temperature. the background carrier concentration was estimated to be in the range of 10(13) similar to 10(14) cm(-3). |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12702]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao DG. Initial stages of GaN/GaAs (100) growth by metalorganic chemical vapor deposition[J]. journal of electronic materials,2000,29(2):177-182. |
| APA | Zhao DG.(2000).Initial stages of GaN/GaAs (100) growth by metalorganic chemical vapor deposition.journal of electronic materials,29(2),177-182. |
| MLA | Zhao DG."Initial stages of GaN/GaAs (100) growth by metalorganic chemical vapor deposition".journal of electronic materials 29.2(2000):177-182. |
入库方式： OAI收割
来源：半导体研究所
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