A study of Si1-xGex/Si quantum-well intermixing by photocurrent spectroscopy
文献类型:期刊论文
作者 | Li C ; Yang QQ ; Chen YH ; Wang HJ ; Wang JZ ; Yu JZ ; Wang QM |
刊名 | thin solid films
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出版日期 | 2000 |
卷号 | 359期号:2页码:236-238 |
关键词 | quantum well intermixing photocurrent spectroscopy photoelectronic devices SiGe/Si MQW blue shift energy ION-IMPLANTATION |
ISSN号 | 0040-6090 |
通讯作者 | li c,chinese acad sci,inst semicond,natl integrated optoelect lab,beijing 100083,peoples r china. |
中文摘要 | photocurrent spectroscopy has been used to study quantum-well intermixing in this paper. the cut-off wavelength of the photodiodes based on the implanted and annealed materials is significantly reduced, compared with that measured in annealed-only photodetectors. the bandgap of sige quantum well in implanted and annealed samples is blue-shifted by up to 97 mev, relative to that in annealed-only samples. (c) 2000 elsevier science s.a. all rights reserved. |
学科主题 | 半导体材料 |
收录类别 | SCI |
语种 | 英语 |
公开日期 | 2010-08-12 |
源URL | [http://ir.semi.ac.cn/handle/172111/12710] ![]() |
专题 | 半导体研究所_中国科学院半导体研究所(2009年前) |
推荐引用方式 GB/T 7714 | Li C,Yang QQ,Chen YH,et al. A study of Si1-xGex/Si quantum-well intermixing by photocurrent spectroscopy[J]. thin solid films,2000,359(2):236-238. |
APA | Li C.,Yang QQ.,Chen YH.,Wang HJ.,Wang JZ.,...&Wang QM.(2000).A study of Si1-xGex/Si quantum-well intermixing by photocurrent spectroscopy.thin solid films,359(2),236-238. |
MLA | Li C,et al."A study of Si1-xGex/Si quantum-well intermixing by photocurrent spectroscopy".thin solid films 359.2(2000):236-238. |
入库方式: OAI收割
来源:半导体研究所
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