中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
A study of Si1-xGex/Si quantum-well intermixing by photocurrent spectroscopy

文献类型:期刊论文

作者Li C ; Yang QQ ; Chen YH ; Wang HJ ; Wang JZ ; Yu JZ ; Wang QM
刊名thin solid films
出版日期2000
卷号359期号:2页码:236-238
关键词quantum well intermixing photocurrent spectroscopy photoelectronic devices SiGe/Si MQW blue shift energy ION-IMPLANTATION
ISSN号0040-6090
通讯作者li c,chinese acad sci,inst semicond,natl integrated optoelect lab,beijing 100083,peoples r china.
中文摘要photocurrent spectroscopy has been used to study quantum-well intermixing in this paper. the cut-off wavelength of the photodiodes based on the implanted and annealed materials is significantly reduced, compared with that measured in annealed-only photodetectors. the bandgap of sige quantum well in implanted and annealed samples is blue-shifted by up to 97 mev, relative to that in annealed-only samples. (c) 2000 elsevier science s.a. all rights reserved.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/12710]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Li C,Yang QQ,Chen YH,et al. A study of Si1-xGex/Si quantum-well intermixing by photocurrent spectroscopy[J]. thin solid films,2000,359(2):236-238.
APA Li C.,Yang QQ.,Chen YH.,Wang HJ.,Wang JZ.,...&Wang QM.(2000).A study of Si1-xGex/Si quantum-well intermixing by photocurrent spectroscopy.thin solid films,359(2),236-238.
MLA Li C,et al."A study of Si1-xGex/Si quantum-well intermixing by photocurrent spectroscopy".thin solid films 359.2(2000):236-238.

入库方式: OAI收割

来源:半导体研究所

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