Effect of thermal annealing on hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy
文献类型：期刊论文
| 作者 | Zhu QS ; Nagai H ; Kawaguchi Y ; Hiramatsu K ; Sawaki N |
| 刊名 | journal of vacuum science & technology a
 |
| 出版日期 | 2000 |
| 卷号 | 18期号:1页码:261-267 |
| 关键词 | P-TYPE GAN DEEP LEVELS |
| ISSN号 | 0734-2101 |
| 通讯作者 | zhu qs,chinese acad sci,inst semicond,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | deep trap levels in a mg-doped gan grown by metalorganic vapor phase epitaxy are studied with deep level transient spectroscopy (dlts). the mg concentration of the sample was 4.8 x 10(19) cm(-3), but the hole concentration was as low as 1.3x10(17) cm-3 at room temperature. the dlts spectrum has a dominant peak d-1 with an activation energy of 0.41+/-0.05 ev, accompanied by two additional peaks with activation energies of 0.49+/-0.09 ev (d-2) and 0.59+/-0.05 ev (d-3). it was found that the dominant peak d-1 consists of five peaks, each of which has different activation energy and capture cross section. in order to investigate these deep levels further, we performed heat treatment on the same samples to observe the variations of activation energy, capture cross section, and amplitude of dlts signals. it was found that the longer the heat treatment duration is, the lower the amplitude of dlts peaks become. this suggests that the decrease of the dlts signal originates from hydrogen atom outgoing from the film during the annealing process. the possible originality of multiple trap levels was discussed in terms of the mg-n-h complex. (c) 2000 american vacuum society. [s0734-2101(00)01701-2]. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12712]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhu QS,Nagai H,Kawaguchi Y,et al. Effect of thermal annealing on hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy[J]. journal of vacuum science & technology a,2000,18(1):261-267. |
| APA | Zhu QS,Nagai H,Kawaguchi Y,Hiramatsu K,&Sawaki N.(2000).Effect of thermal annealing on hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy.journal of vacuum science & technology a,18(1),261-267. |
| MLA | Zhu QS,et al."Effect of thermal annealing on hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy".journal of vacuum science & technology a 18.1(2000):261-267. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。