Pulsed excimer laser annealing of Mg-doped cubic GaN
文献类型：期刊论文
| 作者 | Zhao DG
|
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 209期号:1页码:203-207 |
| 关键词 | annealing cubic GaN Mg doping photoluminescence MOLECULAR-BEAM EPITAXY III-V NITRIDE P-TYPE GAN OPTICAL-PROPERTIES COMPENSATION DIODES FILMS |
| ISSN号 | 0022-0248 |
| 通讯作者 | xu dp,chinese acad sci,inst semicond,natl res ctr optoelect technol,beijing 100083,peoples r china. |
| 中文摘要 | a krf (248 nm) excimer laser with a 38 ns pulse width was used to study pulsed laser annealing (pla) on mg-doped cubic gan alms. the laser-induced changes were monitored by photoluminescence (pl) measurement. it indicated that deep levels in as-grown cubic gan : mg films were neutralized by h and pla treatment could break mg-h-n complex. the evolution of emissions around 426 and 468 nm with different pla conditions reflected the different activation of the involved deep levels. rapid thermal annealing (rta) in n-2 atmosphere reverts the luminescence of laser annealed samples to that of the pre-annealing state. the reason is that most h atoms still remained in the epilayers after pla due to the short duration of the pulses and reoccupied the original locations during rta. (c) 2000 elsevier science b.v. all rights reserved. pacs: 61.72.vv; 61.72.cc; 18.55. -m. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12716]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhao DG. Pulsed excimer laser annealing of Mg-doped cubic GaN[J]. journal of crystal growth,2000,209(1):203-207. |
| APA | Zhao DG.(2000).Pulsed excimer laser annealing of Mg-doped cubic GaN.journal of crystal growth,209(1),203-207. |
| MLA | Zhao DG."Pulsed excimer laser annealing of Mg-doped cubic GaN".journal of crystal growth 209.1(2000):203-207. |
入库方式： OAI收割
来源：半导体研究所
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