Quasi-thermodynamic analysis of MOVPE of AlGaN
文献类型：期刊论文
| 作者 | Lu DC ; Duan S |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 208期号:1-4页码:73-78 |
| 关键词 | AlGaN thermodynamic MOVPE aluminium content VAPOR-PHASE EPITAXY GROWTH NITRIDE REGION ALLOYS |
| ISSN号 | 0022-0248 |
| 通讯作者 | lu dc,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | a quasi-thermodynamic analysis of the movpe growth of alxga1-xn alloy using tmga, tma1 and ammonia has been proposed. the effect of varying growth conditions (growth temperature, reactor pressure, input v/iii ratio, hydrogen pressure fraction in the carrier gas and the decomposed fraction of ammonia) on the distribution coefficient of al has been calculated. in the case of alxga1-xn, preferential incorporation of al is predicted. the calculated relationship between input vapour and deposited solid composition has been compared with data in the literature. a good agreement between the calculated and the experimental composition shows that our improved model is suitable for applying to the alxga1-xn alloy grown by movpe. (c) 2000 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12724]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Lu DC,Duan S. Quasi-thermodynamic analysis of MOVPE of AlGaN[J]. journal of crystal growth,2000,208(1-4):73-78. |
| APA | Lu DC,&Duan S.(2000).Quasi-thermodynamic analysis of MOVPE of AlGaN.journal of crystal growth,208(1-4),73-78. |
| MLA | Lu DC,et al."Quasi-thermodynamic analysis of MOVPE of AlGaN".journal of crystal growth 208.1-4(2000):73-78. |
入库方式： OAI收割
来源：半导体研究所
浏览0
下载0
收藏0
其他版本
除非特别说明，本系统中所有内容都受版权保护，并保留所有权利。