Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy
文献类型：期刊论文
| 作者 | Wang HL ; Ning D ; Zhu HJ ; Chen F ; Wang H ; Wang XD ; Feng SL |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 208期号:1-4页码:107-112 |
| 关键词 | self-assembled quantum dots InAs/GaAs DLTS PL activation energy capture barrier ENERGY-LEVELS CARRIER RELAXATION GROWTH |
| ISSN号 | 0022-0248 |
| 通讯作者 | wang hl,chinese acad sci,natl lab superlattices & microstruct,inst semicond,pob 912,beijing,peoples r china. |
| 中文摘要 | a deep level transient spectroscopy technique has been used to determine the emission activation energies and capture barriers for electrons and holes in inas self-assembled quantum dots embedded in gaas. the ground electron and hole energies relative to their respective energy band edges of gaas are 0.13 and 0.09 ev. measurements show that the capture cross section of quantum dots is thermally activated. the capture barrier of quantum dots for electrons and holes are 0.30 and 0.26 ev, respectively. the results fit well with the results of photoluminescence spectroscopy measurements. (c) 2000 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12726]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Wang HL,Ning D,Zhu HJ,et al. Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy[J]. journal of crystal growth,2000,208(1-4):107-112. |
| APA | Wang HL.,Ning D.,Zhu HJ.,Chen F.,Wang H.,...&Feng SL.(2000).Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy.journal of crystal growth,208(1-4),107-112. |
| MLA | Wang HL,et al."Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy".journal of crystal growth 208.1-4(2000):107-112. |
入库方式： OAI收割
来源：半导体研究所
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