Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy
文献类型：期刊论文
| 作者 | Liu JP ; Huang DD ; Li JP ; Lin YX ; Sun DZ ; Kong MY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 208期号:1-4页码:322-326 |
| ISSN号 | 0022-0248 |
| 关键词 | n-type doping p-type doping Si/SiGe HBT GSMBE SI |
| 通讯作者 | huang dd,chinese acad sci,inst semicond,ctr mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | in situ doping for growth of n-p-n si/sige/si heterojuction bipolar transistor (hbt) structural materials in si gas source molecular beam epitaxy is investigated. we studied high n-type doping kinetics in si growth using disilane and phosphine, and p-type doping in sige growth using disilane, soild-ge, and diborane with an emphasis on the effect of ge on b incorporation. based on these results, in situ growth of n-p-n si/sige/si hbt device structure is demonstrated with designed structural and carrier profiles, as verified from characterizations by x-ray diffraction, and spreading resistance profiling analysis. (c) 2000 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12728]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Liu JP,Huang DD,Li JP,et al. Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy[J]. journal of crystal growth,2000,208(1-4):322-326. |
| APA | Liu JP,Huang DD,Li JP,Lin YX,Sun DZ,&Kong MY.(2000).Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy.journal of crystal growth,208(1-4),322-326. |
| MLA | Liu JP,et al."Doping during low-temperature growth of materials for n-p-n Si/SiGe/Si heterojuction bipolar transistor by gas source molecular beam epitaxy".journal of crystal growth 208.1-4(2000):322-326. |
入库方式： OAI收割
来源：半导体研究所
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