Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice
文献类型：期刊论文
| 作者 | Zhuang QD ; Li JM ; Wang XX ; Zeng YP ; Wang YT ; Wang BQ ; Pan L ; Wu J ; Kong MY ; Lin LY |
| 刊名 | journal of crystal growth
 |
| 出版日期 | 2000 |
| 卷号 | 208期号:1-4页码:791-794 |
| 关键词 | InGaAs/GaAs quantum dots superlattice annealing X-ray MOLECULAR-BEAM EPITAXY INFRARED PHOTODETECTORS STRAIN RELAXATION LUMINESCENCE HETEROSTRUCTURES DEPENDENCE ABSORPTION THRESHOLD OPERATION ISLANDS |
| ISSN号 | 0022-0248 |
| 通讯作者 | zhuang qd,nanyang technol univ,sch eee,nanyang ave,singapore 639798,singapore. |
| 中文摘要 | postgrowth rapid thermal annealing was used to study the relaxation mechanism and optical properties of ingaas/gaas self-assembled quantum dots superlattice grown by molecular beam epitaxy. it is found that a significant narrowing of the luminescence linewidth (from 80 to 42 mev) occurs together with about 86 mev blue shift at annealing temperature up to 950 degrees c. double crystal x-ray diffraction measurements show that the intensity of the satellite diffraction peak, which corresponds to the quantum dots superlattice, decreased with the increasing annealing temperature and disappeared at 750 degrees c, but recovered and increased again at higher annealing temperatures. this behavior can be explained by two competing relaxation mechanisms; interdiffusion and favored migration. the study indicates that a suitable annealing treatment can improve the structural properties of the quantum dots superlattice. (c) 2000 elsevier science b.v. all rights reserved. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12730]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Zhuang QD,Li JM,Wang XX,et al. Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice[J]. journal of crystal growth,2000,208(1-4):791-794. |
| APA | Zhuang QD.,Li JM.,Wang XX.,Zeng YP.,Wang YT.,...&Lin LY.(2000).Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice.journal of crystal growth,208(1-4),791-794. |
| MLA | Zhuang QD,et al."Effects of rapid thermal annealing on self-assembled InGaAs/GaAs quantum dots superlattice".journal of crystal growth 208.1-4(2000):791-794. |
入库方式： OAI收割
来源：半导体研究所
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