Structural properties of SI-GaAs grown in space
文献类型：期刊论文
| 作者 | Chen NF ; Wang YT ; Zhong XR ; Lin LY |
| 刊名 | gravitational effects in materials and fluid sciences
 |
| 出版日期 | 1999 |
| 卷号 | 24期号:10页码:1211-1214 |
| 关键词 | SEMIINSULATING GALLIUM-ARSENIDE MICROGRAVITY STOICHIOMETRY |
| ISSN号 | 0273-1177 |
| 通讯作者 | chen nf,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china. |
| 中文摘要 | the structural properties of semi-insulating gallium arsenide (si-gaas) crystal grown with power-travelling technique in space have been studied by double-crystal x-ray diffractometry and chemical etching. the quality of the crystal was first evaluated by x-ray rocking-curve method. the full width at half maximum of x-ray rocking curve in space-grown si-gaas is 9.4+/-0.08 are seconds. the average density of dislocations revealed by molten koh is 2.0 x 10(4) cm(-2), and the highest density is 3.1 x 10(4) cm(-2). the stoichiometry in the single crystal grown in space is improved as well. unfortunately, the rear of the ingot grown in space is polycrystalline owing to being out of control of power. (c) 1999 cospar. published by elsevier science ltd. |
| 学科主题 | 半导体材料 |
| 收录类别 | SCI |
| 语种 | 英语 |
| 公开日期 | 2010-08-12 |
| 源URL | [http://ir.semi.ac.cn/handle/172111/12734]  |
| 专题 | 半导体研究所_中国科学院半导体研究所（2009年前） |
| 推荐引用方式 GB/T 7714 | Chen NF,Wang YT,Zhong XR,et al. Structural properties of SI-GaAs grown in space[J]. gravitational effects in materials and fluid sciences,1999,24(10):1211-1214. |
| APA | Chen NF,Wang YT,Zhong XR,&Lin LY.(1999).Structural properties of SI-GaAs grown in space.gravitational effects in materials and fluid sciences,24(10),1211-1214. |
| MLA | Chen NF,et al."Structural properties of SI-GaAs grown in space".gravitational effects in materials and fluid sciences 24.10(1999):1211-1214. |
入库方式： OAI收割
来源：半导体研究所
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