中国科学院机构知识库网格
Chinese Academy of Sciences Institutional Repositories Grid
Structural properties of SI-GaAs grown in space

文献类型:期刊论文

作者Chen NF ; Wang YT ; Zhong XR ; Lin LY
刊名gravitational effects in materials and fluid sciences
出版日期1999
卷号24期号:10页码:1211-1214
关键词SEMIINSULATING GALLIUM-ARSENIDE MICROGRAVITY STOICHIOMETRY
ISSN号0273-1177
通讯作者chen nf,chinese acad sci,inst semicond,lab semicond mat sci,pob 912,beijing 100083,peoples r china.
中文摘要the structural properties of semi-insulating gallium arsenide (si-gaas) crystal grown with power-travelling technique in space have been studied by double-crystal x-ray diffractometry and chemical etching. the quality of the crystal was first evaluated by x-ray rocking-curve method. the full width at half maximum of x-ray rocking curve in space-grown si-gaas is 9.4+/-0.08 are seconds. the average density of dislocations revealed by molten koh is 2.0 x 10(4) cm(-2), and the highest density is 3.1 x 10(4) cm(-2). the stoichiometry in the single crystal grown in space is improved as well. unfortunately, the rear of the ingot grown in space is polycrystalline owing to being out of control of power. (c) 1999 cospar. published by elsevier science ltd.
学科主题半导体材料
收录类别SCI
语种英语
公开日期2010-08-12
源URL[http://ir.semi.ac.cn/handle/172111/12734]  
专题半导体研究所_中国科学院半导体研究所(2009年前)
推荐引用方式
GB/T 7714
Chen NF,Wang YT,Zhong XR,et al. Structural properties of SI-GaAs grown in space[J]. gravitational effects in materials and fluid sciences,1999,24(10):1211-1214.
APA Chen NF,Wang YT,Zhong XR,&Lin LY.(1999).Structural properties of SI-GaAs grown in space.gravitational effects in materials and fluid sciences,24(10),1211-1214.
MLA Chen NF,et al."Structural properties of SI-GaAs grown in space".gravitational effects in materials and fluid sciences 24.10(1999):1211-1214.

入库方式: OAI收割

来源:半导体研究所

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